SOI type semiconductor device using electrochemical etching method and manufacturing method of active driving liquid crystal display device using the same

摘要

In the present invention, a device is fabricated on a general silicon substrate, and a portion other than the device region is etched by an electrochemical method to have a structure similar to that of the SOI type device. Thus, advantages of the SOI type device And a manufacturing method of an active matrix liquid crystal display device using the same as a pixel switching element. A method of manufacturing an SOI type semiconductor device according to the present invention is a method of manufacturing an SOI type semiconductor device which uses a general silicon substrate at a lower cost than an SOI substrate and has an excellent electrical insulation property between the devices like a SOI type device, There is an advantage that it can be manufactured. In addition, according to the manufacturing method of an active matrix liquid crystal display device according to the present invention, integration of the driving circuit and the additional circuit is easy, and current semiconductor integration technology can be used as it is. Therefore, compared to the case of using polycrystalline silicon In addition, it has advantages such as high resolution and high integration, low driving voltage and power consumption, as well as automatically aligning the etched holes with the microstructure of the front surface of the substrate, The position is determined, and no chemical or mechanical damage is caused to the structure already formed on the substrate.