Fabrication method of ultra high-speed bipolar junction transistor

摘要

The present invention relates to a method of manufacturing an ultra-high-speed bipolar junction transistor capable of improving an operating frequency by reducing a series resistance of a collector and a collector junction capacitance of a collector, ; Forming an epitaxial layer of the same type as the semiconductor substrate on the resultant product; Forming a trench region having a predetermined depth on both sides of a predetermined portion of the resultant product; Embedding an oxide film in the trench region; Forming a collector region that diffuses into the buried layer; Forming a base region at predetermined portions of both ends of the epi layer between the oxide films buried in the trench region; Forming an emitter region at a predetermined portion of the epi layer between the base regions; And forming metal wirings in the collector, base and emitter regions.