Rapid thermal treatment method of ferroelectric, high dielectric, electrostrictive, semiconductive, or conductive ceramic thin films using microwave

摘要

In order to provide a new type of ceramic thin film heat treatment method capable of achieving uniform heating even when heat treating a wafer of a sufficiently large size, capable of rapidly increasing the temperature and improving the crystallinity of the deposited thin film, A microwave is applied to the thin film on the supporting means, the thin film is rapidly heated, the temperature is measured using a temperature measuring means, and the generation of the microwave is stopped at a desired temperature, A rapid thermal processing method of a ceramic thin film is provided.