RAPID THERMAL PROCESSING METHOD FOR FERROELECTRIC, HIGH DIELECTRIC, ELECTROSTRICTIVE, SEMICONDUCTIVE, OR CONDUCTIVE CERAMIC THIN FILM USING MICROWAVES

摘要

The present invention is to provide a heat treatment method of a new type of ceramic thin film that can be uniformly heated even when heat-treating a wafer of a sufficiently large size, the temperature can be increased rapidly, and the crystallinity of the deposited thin film can be improved; Microwave is formed by placing a material on which a thin film is formed in a support water unit, applying microwave to the thin film, rapidly heating the thin film, measuring temperature using a temperature measuring means, and stopping the generation of microwave at a desired temperature. Provided is a rapid heat treatment method for a used ceramic thin film.