DEVICE WHICH MEASURES C-G-V CHARACTERISTICS OF METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES

摘要

FIELD: instruments. SUBSTANCE: device has control unit 1, reference voltage source 2, reference capacitor 3, operational amplifier 4, terminals 5 for connection of test sample, programmable bias voltage source 6, isolating capacitor 7, voltage subtraction units 8, 17, 26, controlled voltage dividers 9 and 13, control voltage sources 10 and 28, zero devices 11 and 27, peak detectors 12 and 15, time constant measuring unit 4, units 16 and 25 which measure stabilized voltage level, comparison unit 18, gate 19, low-pass filter 20, commutator 21, pen recorder 22, inverting controlled voltage divider 23, reference resistor 24. EFFECT: increased functional capabilities due to possibility to measure resistance of leakage in metal-dielectric-semiconductor structure. 1 dwg