A method for producing a pair of anti-fuses in a prom - chip and programmable read only - - memory chip (prom) with pairs of mosfet - devices

摘要

a programmable lesespeichervorrichtung only with a antisicherung in the drain node of a feldeffektransistors and a manufacturing process are revealed. the programming is performed by connecting a high voltage to the drain and gate of the transistor which makes the antisicherung into a closed circuit, the transistor open circuit appears otherwise.attaching the antisicherung in drain node instead of the source node avoids problems with reverse source tensioning.