ENGRAVING-FREE TECHNOLOGY FOR INTEGRATING COMPONENTS

摘要

The present invention relates to a method for integrating several semiconductor structures on the same substrate, according to which: - a primary mask (1) is deposited on said substrate (2), - openings in this mask primary (1) revealing selected areas (5) of the surface of the substrate (2), - an epitaxy of a structure A of semiconductor component located in said selected areas of the substrate, terminated by- an epitaxy of a material B located on the structure A (10), the material B being able to be selectively transformed into a material C which can constitute a mask (15) for localized epitaxy, - removal of said primary mask (1), - selective transformation of said material B in said material C so that the material C constitutes another mask (15) for localized epitaxy, and- an epitaxy of a structure D (20) of semiconductor component located outside of said other mask.