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Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer
Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer
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机译:包括锆钛氧化物阻挡层的集成电路结构和形成锆钛氧化物阻挡层的方法
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摘要
An integrated circuit structure including dielectric barrier layer compatible with perovskite ferroelectric materials and comprising zirconium titanium oxide, ZrTiO.sub.4, and a method of formation of the dielectric barrier layer by sol gel process is described. The amorphous, mixed oxide barrier layer has excellent dielectric properties up to GHz frequencies, and crystallizes above 800° C., facilitating device processing. In particular, the barrier layer is compatible with lead containing perovskites, including PZT and PLZT ferroelectric dielectrics for example for application in non-volatile memory cells, and high value capacitors for integrated circuits, using silicon or GaAs integrated circuit technologies.
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