Ferroelectric random access memory circuits and structures for preventing ferroelectric capacitors from memory failure

摘要

A novel ferroelectric random access memory structure which comprises a capacitor consisting of upper and lower plane electrodes and a ferroelectric inserted therebetween, and a transistor comprising a means of inducing the capacitor to polarization and maintaining it, connected with at least one of the electrodes, wherein the electric potential of the upper electrode is equalized with that of the lower electrode, thereby preventing the polarization reversal caused by pyroelectric charges.