GROWTH METHOD OF GALLIUM NITRIDE GROUP SEMICONDUCTOR AND SUBSTRATE FOR GROWING THE GAN GROUP SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a GaN group semiconductor and a substrate for growing a GaN group semiconductor, wherein a single-crystal GaN group semiconductor of good quality can be grown. ;SOLUTION: Using a substrate 1 whose surface is made of at least MoS₂, a GaN group semiconductor 3 is grown on it through molecular beam epitaxy method and the like. Preferably, a buffer layer 2 of GaN group semiconductor is first grown at a temperature lower than the growth temperature for the GaN group semiconductor 3, then the GaN group semiconductor 3 is grown over it. When the GaN group semiconductor 3 or the buffer layer 2 is grown, material supply at the growth of the buffer layer 2 starts with the supplying of a Ga material.;COPYRIGHT: (C)1999,JPO