IMPROVED CMOS HAVING USEFULNESS OF LOW CGD, IMPROVED DOPING PROFILE AND SIDEWALL PROCESS/METHOD OF INJECTION FOR NON-SENSITIVITY AGAINST CHEMICAL PROCESSING

摘要

PROBLEM TO BE SOLVED: To form the doping of a peak below a channel surface and to reduce extension in the lateral direction of a pocket with high concentration by executing injection with an angle in the pocket area of a second conduction type in a semiconductor main body at the lower part of an injection inhibition structure and forming the pocket in the semiconductor main body. SOLUTION: Pocket areas 18 are doped in a method opposite to drain extension areas 16. In the case of an n-type transistor, the areas are p-types. The peak concentration of the pocket areas 18 has a prescribed distance with considerable extension from the surface of a substrate 10 and/or the extension of the lateral direction of the high concentration pocket on a channel surface extending to a channel area from the inner part of a drain diffusion area is reduced. Thus, reduced threshold voltage rolling-off, a reduced nominal value Vt and improve nominal driving current are maintained. Reinforced dopant scattering owing to raised dopant covering large extension in the lateral direction near the channel surface can considerably be reduced.