SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT, OPTICAL DISC RECORDING/PRODUCING DEVICE AND OPTICAL TRANSMITTER FOR PLASTIC OPTICAL FIBER

摘要

PROBLEM TO BE SOLVED: To enable high temp. high output operation at a specified visiblle range, by using a specified mixed crystal semiconductor contg. N as a component element in a light emitting layer. ;SOLUTION: A lower reflection mirror 201, a light emitting layer 202 and an upper reflection mirror 205 are laminated on a crystal substrate 101 to form a surface-emitting semiconductor laser element for radiating a light in a direction perpendicular to the crystal substrate 101. The light emitting layer uses an N-contg. Ga_xIn_1-xN_yP_1-y mixed crystal semiconductor as a component element, Ga_xIn_1-xN_yP_1-y is a 4-element mixed crystal material contg. N as a V group element introduced in a Ga_xIn_1-xP 4-element mixed crystal, and the inhibition band of Ga_xIn_1-xP is in the range of 1.35-2.24 eV for direct transition and when N is a little introduced in Ga_xIn_1-xP, its inhibition bandwidth reduces about 150 eV with 1% of the N compsn. Hence Ga_xIn_1-xN_yP_1-y enables the light emission at a 0.6 m band. The conductive band discontinuity to a barrier layer is high and hence the high temp. high output operation is enabled at the 0.6 m band.;COPYRIGHT: (C)1999,JPO