DEPOSITION OF SILICON DIOXIDE BY PLASMA-ACTIVATED VAPORIZATION PROCESS

摘要

PROBLEM TO BE SOLVED: To impart resistance to UV deterioriation and wear resistance (scratch resistance) by forming the oxide film modified with a flexible organosilicon by a combination of physical and chemical vapor deposition on a polycarbonate sheet coated with hard silicon. ;SOLUTION: A polycarbonate sheet 1 is traveled on the upper face of the movable pallet 2 on top of a vacuum chamber, and the silica vaporized by plasma-activated reaction is deposited through the window of the pallet 2. In this case, an electron-beam gun 5 is moved in the axial direction of a rotary drum 4 arranged below the pallet 2, the drum 4 surface is bombarded to vaporize the silica, and the vapor current is passed through the high-density plasma from a multiple hollow cathode plasma source 6. In this case, a uniform plasma density is imparted in the width direction of the sheet 1 by the plasma source 6, and the nitrogen monoxide, organosilicon and/or an oxygen reacting gas supplied from the reactive gas manifolds 7 and 8 are combined with the silica passing through the plasma.;COPYRIGHT: (C)1999,JPO