SEMICONDUCTOR LASER AND OPTICAL TRANSMISSION MODULE FOR PARALLEL TRANSMISSION AND APPLICATION SYSTEM USING THESE SEMICONDUCTOR LASER AND MODULE

摘要

PROBLEM TO BE SOLVED: To suppress overflow of electrons and to reduce a threshold current and shorten a carrier lifetime, by forming a barrier layer in a quantum well layer in a composition wavelength within a specific range, and forming a guide layer in the composition wavelength within the specific range while setting the quantum well layer in a specific number of layers. ;SOLUTION: A laser element consists of N-type barrier layers 101, to which Si in dosage of 3×10¹⁸ cm^-3 is doped and which has film thickness of 10 nm, undoped quantum well layers 102 in film thickness of 6 nm, guide layers 103, 104 composed of InGaAsP and having a composition wavelength of 1.0 μm, an N-type InP clad layer 105 and a P-type InP type clad layer 106, and the quantum well layers are made up of five layers. The composition wavelength of a barrier layer in the quantum well layers is formed in 1.04-1.09 μm and the composition wavelength of the guide layers is formed in 1.03-1.06 μm. A mean threshold current at room temperature is 1.5 mA, a mean carrier lifetime is 1.05 ns, and an oscillation delay time at the time of a driving current of 15 mA in the half bias current of the threshold current is 56 ps.;COPYRIGHT: (C)1999,JPO