首页> 外国专利> FILM PATTERNING METHOD, MANUFACTURE OF SEMICONDUCTOR ELEMENT, THIN-FILM SOLAR CELL, AND MANUFACTURE OF THE SOLAR CELL

FILM PATTERNING METHOD, MANUFACTURE OF SEMICONDUCTOR ELEMENT, THIN-FILM SOLAR CELL, AND MANUFACTURE OF THE SOLAR CELL

机译:薄膜图案化方法,半导体元件的制造,薄膜太阳能电池以及太阳能电池的制造

摘要

PROBLEM TO BE SOLVED: To conduct patterning films simply. ;SOLUTION: In a layered product 3 with a second film 2 laminated on a first film 1 a nozzle 4 is jetted towards the regions to be removed of the second film 2 a liquid 5 with a pressure higher than the atmospheric pressure, some portions of the second film 2 are removed by the pressure of the liquid 5 to pattern the second film 2. In the used liquid 5, the etching-speed ratio of the second film 2 to the first film 1 is made not lower than 10:1, and its pH is held within the range of 2.5-6 or 8.0-11.5, and its jetted pressure is held within the range of 100-500 kg/cm2. Such a patterning method is utilized in the patterning processing of the translucent conductive film, photoelectric conversion film, and rear-surface electrode film of an integrated thin-film solar battery.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:简单地进行图案化膜。 ;解决方案:在具有第二膜2层压在第一膜1上的层状产品3中,朝着第二膜2的待去除区域喷射喷嘴4,其中液体5的压力高于大气压,在液体5的压力下除去第二膜2以形成第二膜2的图案。在用过的液体5中,使第二膜2与第一膜1的蚀刻速度比不小于10:1, pH值保持在2.5-6或8.0-11.5范围内,喷射压力保持在100-500 kg / cm 2 范围内。这种图案化方法被用于集成薄膜太阳能电池的半透明导电膜,光电转换膜和背面电极膜的图案化处理中。; COPYRIGHT:(C)1999,JPO

著录项

  • 公开/公告号JPH1126427A

    专利类型

  • 公开/公告日1999-01-29

    原文格式PDF

  • 申请/专利权人 SANYO ELECTRIC CO LTD;

    申请/专利号JP19970176188

  • 发明设计人 HAKU HISAO;SASAKI MANABU;SAYAMA KATSUNOBU;

    申请日1997-07-01

  • 分类号H01L21/306;H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-22 02:33:37

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