THIN-FILM TRANSISTOR, COMPLEMENTARY THIN-FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor which is suitable for high-integration, and has a structure for high productivity. ;SOLUTION: This thin-film transistor comprises an intrinsic channel region 12a, an LDD region 12b which, added with impurities in a first concentration, is so provided as to sandwich the channel region 12a, a semiconductor film 12 comprising a source region 12s and a drain region 12d which, being a contact region, are provided in the LDD region 12b and added with impurities in a second concentration which is denser than the first one, a gate insulating film 13 is provided on the channel region 12a and the LDD region 12b of the semiconductor film 12, so as to have an opening part at the source region 12s and the drain region 12d a gate electrode 14 so arranged as to face opposite the channel region 12a of the semiconductor film 12 via the gate insulating film 13, an inter-layer insulating film 16 so provided as to cover the gate electrode 14 and the gate insulating film 13 such that an opening part is equipped at the source region 12s and the drain region 12d of the semiconductor film 12, and a source/drain electrode 17s and a drain electrode 17d which is jointed to the source region 17s and the drain region 17d of the semiconductor film 12.;COPYRIGHT: (C)1999,JPO