PRODUCTION OF STANNIC OXIDE TIN FILM AND PRODUCTION OF INDIUM SESQUIOXIDE-STANNIC OXIDE TIN FILM

摘要

PROBLEM TO BE SOLVED: To enable the formation of a tin film on a substrate having a low heat resistance by coating the surface of the substrate with a sol prepared by hydrolyzing a solution containing an Sn alkoxide, forming a gel film, then irradiating the formed gel film with ultraviolet radiation at a specified wave length or below and crystallizing the gel forming the tin film. ;SOLUTION: An Sn alkoxide such as Sn butoxide is dissolved in an organic solvent such as butanol and an acidic catalyst such as hydrochloric acid and water in a molar amount of 0.05-2 times based on the alkoxide are added and mixed therewith to hydrolyze the Sn alkoxide. Thereby, a homogeneous SnO₂ sol is prepared. The surface of a substrate is then coated with the resultant SnO₂ sol and the formed film is dried to form a gel film, which is subsequently irradiated with ultraviolet radiation at ≤360 nm wavelength at ambient temperature to crystallize the SnO₂ gel and form a transparent electroconductive thin film. Otherwise, the surface of the substrate is coated with an In₂O₃-SnO₂ sol composed of an In alkoxide and ≥20 wt.% Sn alkoxide. The formed film is made to gel and the resultant gel film is then irradiated with the ultraviolet radiation to afford the transparent electroconductive thin film.;COPYRIGHT: (C)1998,JPO