AMPLIFYING SEMICONDUCTOR ELEMENT, MANUFACTURE THEREOF AND AMPLIFYING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the adjacent channel leak power at a low voltage below specified value, thereby operating at a high efficiency by comprising a field effect transistor having specified relation between a threshold voltage Vth and operating voltage. ;SOLUTION: The operating voltage is a drain voltage Vdr, specified relation includes a relation Vdr≤|Vth|, Vdr=1.0-3.5 V and Vth=-2.5--4.5 V. The amplifying semiconductor element FET 1 has an n-layer 1, n⁺-layer 2 on a semiinsulative GaAs substrate 20 surface, gate electrode 7 on the layer 1, multilayer electrode 5 on the layer 2 and feed electrode 11 formed thereon, including a source electrode pad 11s and drain electrode pad 11d with SnN layers 3, 8 laminated on both sides of the n⁺-layer 2 as insulation films. This suppresses the adjacent channel leak power below specified value and ensures a high-efficiency operation.;COPYRIGHT: (C)1998,JPO