首页> 外国专利> COATING LIQUID FOR USE IN FORMING ELECTRICALLY CONDUCTIVE FILM, METHOD FOR FORMING ELECTRICALLY CONDUCTIVE FILM, AND METHOD FOR FORMING ELECTRICALLY CONDUCTIVE FILM OF LOW REFLECTIVITY

COATING LIQUID FOR USE IN FORMING ELECTRICALLY CONDUCTIVE FILM, METHOD FOR FORMING ELECTRICALLY CONDUCTIVE FILM, AND METHOD FOR FORMING ELECTRICALLY CONDUCTIVE FILM OF LOW REFLECTIVITY

机译:用于形成导电膜的涂布液,用于形成导电膜的方法以及用于形成低反射率的导电膜的方法

摘要

PROBLEM TO BE SOLVED: To provide a coating liquid for use in forming electrically conductive film that can form an electrically conductive film contributing to the improvement of contrast due to the occurrence of absorption over the whole visible light region, and also excellent in low reflectivity by heat treatment at a low temperature, by using a sol of metal fine particles of Ru. ;SOLUTION: This coating liquid for use in forming electrically conductive film is prepared by dispersing metal fine particles of Ru homogeneously in a sol form in water, an organic solvent or the like. Fine particles formed by chemical reduction of a Ru salt are preferably used. The average coagulated particle diameter and the powder volume resistance of the metal particles are preferably 200 nm or less and 0.01 ohm.cm or less, respectively. This coating liquid may contain a silicon compound for adjusting the surface tension, the spreadability and the like of the liquid, and may also contain a metal oxide of Sn, Sb, In or the like, for example, for adjusting the thickness of the resulting conductive film. An electrically conductive film having a low reflectivity is provided by forming, on this electrically conductive film, a film having a lower refractive index than that of this film (SiO2 or MgF2).;COPYRIGHT: (C)1999,JPO
机译:解决的问题:提供一种用于形成导电膜的涂布液,其可以形成导电膜,所述导电膜由于在整个可见光区域上发生吸收而有助于改善对比度,并且还具有优异的低反射率。通过使用Ru的金属细粒溶胶在低温下进行热处理。 ;解决方案:这种用于形成导电膜的涂布液是通过将Ru的金属细颗粒以溶胶形式均匀地分散在水,有机溶剂等中来制备的。优选使用通过Ru盐的化学还原形成的细颗粒。金属粒子的平均凝集粒径和粉体电阻优选分别为200nm以下和0.01ohm.cm以下。该涂布液可以包含用于调节液体的表面张力,铺展性等的硅化合物,并且还可以包含例如用于调节所得产物的厚度的Sn,Sb,In等金属氧化物。导电膜。通过在该导电膜上形成折射率比该膜(SiO 2 或MgF 2 ).;版权:(C)1999,日本特许厅

著录项

  • 公开/公告号JPH115929A

    专利类型

  • 公开/公告日1999-01-12

    原文格式PDF

  • 申请/专利权人 ASAHI GLASS CO LTD;

    申请/专利号JP19970217850

  • 申请日1997-08-12

  • 分类号C09D5/24;B05D5/12;B05D7/00;H01J9/20;H01J29/88;

  • 国家 JP

  • 入库时间 2022-08-22 02:31:22

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