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Lead content perovskite structural compound oxide ferroelectric thin film, the manufacturing method and material

机译:铅含量钙钛矿结构复合氧化物铁电薄膜,制造方法和材料

摘要

PURPOSE: To stably obtain the thin film having excellent dielectric characteristics by using a lead-containing ferroelectric compound oxide expressed by a specific general formula as the constituent component and restricting the total amount of Li, Na and K existing in the oxide as impurities below a specific level. ;CONSTITUTION: The ferroelectric thin film is composed of a compound oxide having lead perovskite structure and expressed by the general formula (x and y are 0 or positive number of 1) and containing ≤1ppm of Li, Na and K in total as impurities. The film is produced by the following procedures. The constituent components for the production of the ferroelectric thin film are purified in the form of organometallic compounds by repeating the distillation, sublimation, recrystallization or their combination. The purified components are dissolved in an organic solvent to obtain a film-forming coating liquid having prescribed composition and the liquid is applied to a substrate, dried and baked.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:通过使用由特定通式表示的含铅铁电复合氧化物作为构成成分,并将氧化物中作为杂质存在的Li,Na和K的总量限制在a以下,以稳定地获得具有优异介电特性的薄膜具体级别。 ;组成:铁电薄膜由具有钙钛矿结构的复合氧化物组成,并由通式表示(x和y为0或正数<1),并且总共含有≤1ppm的Li,Na和K作为杂质。该膜通过以下步骤生产。通过重复蒸馏,升华,重结晶或它们的组合,以有机金属化合物的形式纯化用于生产铁电薄膜的组成成分。将纯化的组分溶解在有机溶剂中以获得具有规定组成的成膜涂布液,并将该液体涂布到基材上,干燥并烘烤。; COPYRIGHT:(C)1993,JPO&Japio

著录项

  • 公开/公告号JP2956356B2

    专利类型

  • 公开/公告日1999-10-04

    原文格式PDF

  • 申请/专利权人 MITSUBISHI MATERIARU KK;

    申请/专利号JP19920148450

  • 发明设计人 OGI KATSUMI;ZEN HIDEKI;SOYAMA NOBUYUKI;

    申请日1992-05-15

  • 分类号C04B35/49;B01J19/00;H01B3/12;

  • 国家 JP

  • 入库时间 2022-08-22 02:31:11

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