MANUFACTURE AND OF DEVICE OR MAGNETIC FILM, MAGNETIC THIN FILM INDUCTOR, MONOLITHIC MICROWAVE INTEGRATED CIRCUIT FIELD DUPLEXING CIRCUIT AND DEVICE

摘要

PROBLEM TO BE SOLVED: To make feasible of forming a magnetic film durable for high-frequency application, by finely dispersing insulating magnetic oxide phase into magnetic ally phase within the magnetic film. ;SOLUTION: Insulating magnetic oxide phase is finely dispersed into magnetic alloy mother phase within a magnetic film 13. At this time, the insulating magnetic oxide is to be made of at least a nickel oxide, an iron oxide and a zinc oxide while the composition when they are conveniently expressed in the three component ratio of Fe₂O₃, NiO and ZnO in chemical formulas, they are to be within the range i.e., 40 to 60 mol.% of Fe₂O₃, 10 to 30 mol.% of NiO and 20 to 40 mol.% of ZnO. In such a constitution, a magnetic film manufacturing device is to be provided with a functional part 2 forming insulating magnetic oxide phase by laser abrasion process in a single chamber 1 as well as another functional part 3 forming magnetic alloy mother phase by sputtering process. Besides, the atmospheric gas pressure in the film formation time of these functional parts 2, 3 is to be independently controlled.;COPYRIGHT: (C)1999,JPO