首页> 外国专利> STRESS TEST METHOD FOR INTEGRATED CIRCUIT WITH MEMORY AND INTEGRATED CIRCUIT WITH STRESS TESTER FOR MEMORY

STRESS TEST METHOD FOR INTEGRATED CIRCUIT WITH MEMORY AND INTEGRATED CIRCUIT WITH STRESS TESTER FOR MEMORY

机译:记忆集成电路的应力测试方法及记忆测试仪集成电路的应力测试方法

摘要

PROBLEM TO BE SOLVED: To shorten the time required for testing a memory by forming a stress select means on a substrate and performing a stress test only at a selected part on a memory block in order to decide whether the memory block is accepted or not. ;SOLUTION: An integrated circuit 10 having enhanced test capacity comprises a substrate 11, and a memory block 20 including a plurality of memory cells 25 arranged in a matrix having a plurality of rows R and columns C. A selectable stress tester 30 including a selectable test pattern generating means is formed on the substrate 11. The test pattern generating means generates a test pattern selectively over the boundary only between two adjacent rows R and two adjacent columns C of the memory block 20. A decision is made whether a selected part of the memory block 20 is acceptable or not by applying a high frequency waveform signal of about 100 MHz.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:通过在基板上形成应力选择装置并仅在存储块上的选定部分执行压力测试来缩短测试存储器所需的时间,以便确定是否接受该存储块。 ;解决方案:具有增强的测试能力的集成电路10包括衬底11和存储块20,该存储块20包括以矩阵形式排列的多个存储单元25,该矩阵具有多个行R和列C。可选压力测试仪30包括可选在基板11上形成测试图案产生装置。测试图案产生装置仅在存储块20的两个相邻行R和两个相邻列C之间的边界上选择性地产生测试图案。确定是否选择了测试图案。通过施加大约100 MHz的高频波形信号,存储块20是否可接受。;版权所有:(C)1999,JPO

著录项

  • 公开/公告号JPH117798A

    专利类型

  • 公开/公告日1999-01-12

    原文格式PDF

  • 申请/专利权人 ST MICROELECTRON INC;

    申请/专利号JP19980143285

  • 发明设计人 SIUCHEONG SO JASON;

    申请日1998-05-25

  • 分类号G11C29/00;G01R31/28;

  • 国家 JP

  • 入库时间 2022-08-22 02:30:58

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