Platinum thin film forming method, substrate manufactured by the method, electronic device using the substrate, and method of manufacturing the electronic device

摘要

PROBLEM TO BE SOLVED: To make it possible to form a platinum film, having mostly prioritized orientation of (200) direction, on an insulation layer oxide. SOLUTION: An insulation oxide film layer 12 is formed on a surface of silicon wafer 11 (step S2). A platinum layer containing oxygen is formed on the insulation oxide thin film layer by heating the wafer 11 from the room temperature to 700 deg.C and depositing platinum on the insulation oxide thin film (step S3). The platinum layer is converted to a pure platinum thin layer 15 removing oxygen from the platinum layer by heating the wafer 11 at 400 deg.C-1000 deg.C. The prioritized orientation of (200) direction, expressed by equation, on the pure platinum thin layer 15 is more than 90%.