Magnetic field enhanced plasma etch reactor

摘要

PURPOSE: To obtain a fast etching speed and a high etching uniformity, by arranging a wafer in parallel with an electrode surface, and in close vicinity to the electrode body having a protruded surface for supporting the wafer into a bowlike shape, and changing the magnitude and direction of a magnetic field selectively so as to etch the wafer placed on the electrode uniformly. CONSTITUTION: A wafer becomes parallel with the surface of a pedestal 72, by making the wafer into a convex or bowlike shape prestressed. Namely, it is possible to have a long contact distance between the pedestal and the wafer. In a reactor 60, a magnetic fields is effectively rotated favorably at a slow speed of 2-5sec/revolution for example, by a simple means of changing an electric wave to a magnetic coil successively. This step moves the magnetic field at a slow speed around a wafer 75, and the uniformity of etching is enhanced over the whole periphery 360 deg. of the wafer 75, not crossing the wafer 75 in one direction.