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Measuring method and device null of grain size of polycrystal

机译:多晶晶粒度的测量方法及装置零值

摘要

PURPOSE:To measure the grain size of Al crystals on line so as to select Al multi-layered wirings of poor electro-migration resistance of an LSI in a manu facturing process. CONSTITUTION:A wafer to which Al is sputtered is Keller-etched to make the boundaries of grains clear. An SEM image is obtained by an image input device. The image is displayed on the screen at 2. A diagonal line is drawn on the image at 3. A mark is automatically given at a crossing point of the diagonal line with the boundary of grains at 4. A measuring person views the image and manually corrects the mark. The distance between the crossing points of the boundaries of grains on the diagonal line is regarded as the grain size. The frequency distribution of logarithmic values of the grain size is calculated to obtain a median and a standard deviation and further a shape coefficient at 9.
机译:用途:测量在线上的Al晶体的晶粒尺寸,以便选择制造过程中LSI的抗电迁移性差的Al多层布线。组成:溅射有铝的晶片被凯勒蚀刻,使晶界清晰。通过图像输入装置获得SEM图像。图像在屏幕上的2处显示。在3处的图像上绘制一条对角线。在对角线与晶界的交点处的交点处自动给出标记4。测量人员手动查看图像更正标记。对角线上的晶粒边界的交叉点之间的距离被认为是晶粒尺寸。计算晶粒尺寸的对数值的频率分布,以获得中值和标准偏差,进而获得形状系数为9的值。

著录项

  • 公开/公告号JP2889448B2

    专利类型

  • 公开/公告日1999-05-10

    原文格式PDF

  • 申请/专利权人 KAWASAKI SEITETSU KK;

    申请/专利号JP19920318777

  • 发明设计人 OKA SHINSUKE;

    申请日1992-11-27

  • 分类号G01B11/08;G06T7/00;

  • 国家 JP

  • 入库时间 2022-08-22 02:29:06

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