Domain inversion structure formation method of a ferroelectric

摘要

PURPOSE: To enable the sure formation of domain inversion parts of prescribed patterns particularly near the surface of a ferroelectric substance by previously depositing a high resistance layer having the electric resistance higher than the electric resistance of the ferroelectric substance on the surface part of the ferroelectric substrate where is irradiated with charged particle rays. ;CONSTITUTION: An SiO₂ film 2 as the high resistance layer is deposited by a sputtering method on the -Z face 1a of a substrate (LN substrate) 1 of LiNbO₃ which is the ferroelectric substance having a nonlinear optical effect. A Cr film 3 as an electrode is formed on the +z face 1b of this LN substrate 1. This Cr film 3 is grounded. An electron beam 4 is then cast toward the -Z face 1a of the LN substrate 1 beyond the SiO₂ film 2 to form the domain inversion parts 5 extending from this irradiation direction, i. e., the -Z face 1a toward the depth direction. The SiO₂ is then removed by etching with a mixed acid of hydrofluoric acid and nitric acid and the -Z face 1a if the LN substrate 1 is etched as wall.;COPYRIGHT: (C)1993,JPO&Japio