USE OF PALLADIUM IMMERSION DEPOSITION TO SELECTIVELY INITIATE ELECTROLESS PLATING ON TI AND W ALLOYS FOR WAFER FABRICATION

摘要

(57) AbstractA method for making integrated circuit wafers wherein the wafer has vias or other openings in the wafer which openings have abarrier/adhesion or other metal layer which is metallized to form the circuit comprising activating the metal layer and then sensitizing themetallic layer using a sensitizing displacement composition comprising preferably an alkaline palladium non-ammonia nitrogen (ethylenediamine) complex which is contacted with the wafer at a specially controlled pH. The wafer is activated using an activation solution whichcontains a complexing agent for any dissolved metal. The sensitizing solution also preferably contains a complexing agent for dissolvedmetal and preferably contains a second complexing agent such as EDTA to solubilize base metal contaminants.