LOW KAPPA DIELECTRIC INORGANIC/ORGANIC HYBRID FILMS AND METHOD OF MAKING

摘要

A dielectric film on a semiconductor or integrated circuit substrate andmethod of making it are disclosed, wherein said dielectric film has a backbonestructure comprised substantially of inorganic groups and organic groups andorganic side groups attached to said backbone structure to form a hybrid ofinorganic and organic materials that provide said film having a dielectricconstant of less than 4.0 and exhibiting weight loss of less than 2 % per hourat 400 ~C in nitrogen. The dielectric film is deposited on a substrate (14)located on a support (16) by a plasma CVD process, and the support beingbiased by a r.f. generator (18). An organosilicon precursor is introduced intoa deposition chamber (11) through gas inlets (26 or 28).