Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material

摘要

The invention relates to a method of electrochemically etching a p-type semiconductor material, characterized by the following steps: a) the application of mask material on a substrate of the p-type semiconductor material; b) the local removal of the mask material; and c) placing the substrate with the mask into a corrosive electrolytic solution while simultaneously applying a current density through the substrate; wherein the current density during step c) is adjusted alternatingly to a high value causing the semiconductor material to be completely etched away, and a low value corroding the semiconductor material such as to become porous.