FORMATION METHOD OF TI SILICIDE IN SEMICONDUCTOR DEVICE

摘要

The present invention relates to a method for forming a titanium salicide of a semiconductor device, wherein a multi-layered gate electrode is formed by thinly depositing titanium nitride as a diffusion barrier layer between a dope polysilicon layer and an undoped polysilicon layer during polycrystalline silicon gate electrode fabrication. As a result, diffusion through the salicide layer of high concentration impurities is prevented, which is effective in stabilizing transistor characteristics when applied to dual gates using poly gates of N ⁺ and P ⁺ , and prevents aggregation by thermal processes. The present invention relates to a method for forming titanium salicide in a semiconductor device capable of improving the reaction rate of the salicide reaction and achieving uniformity of the reaction, thereby reducing contact resistance and sheet resistance.