Transfer mechanism using vacuum adsorption method

摘要

The present invention relates to a transfer mechanism for transferring a semiconductor material or product using a vacuum adsorption method, in order to prevent defects caused by static electricity or residual vacuum phenomenon when the contact area between the transfer material and the transfer mechanism is large, the transfer material To provide a transfer mechanism with a minimum contact area with. The transfer mechanism of the present invention includes a body portion having a flat upper surface, a vacuum hole formed in the upper surface of the body portion, an adsorption pad formed around the vacuum hole and protruding from the upper surface of the body portion, and a preliminary adsorption formed outside the absorption pad. The pad is included, and in particular, since the adsorption pad is formed to have a ring shape, the contact area with the conveying material can be minimized while the adsorption area can be increased.;The adsorption pad may be formed of a high strength material such as aluminum alloy or ceramic, or a separate preliminary adsorption pad may be formed around the adsorption pad in order to prevent damage due to minimization of the width thereof. In addition, for more stable adsorption, adsorption pads having different sizes and separate vacuum holes may be further formed. The transfer mechanism of the present invention is particularly useful for transferring semiconductor materials or products such as wafers, integrated circuit chips, chip packages, and the like.