Kinetics of atomic mechanisms of adsorption at the microwave vacuum - plasma deposition of submonolayer carbon coverings on silicon crystalss

摘要

Dependences of density of insular nanoeducations on temperature of sedimentation of submonolayer carbon coverings on silicon (100) crystals in the microwave plasma of fumes ethanol after a preliminary micromachining of plates in CF4 plasma and argon are investigated. It is established that after plasma micromachining in freon superficial density it is less, than after processing in argon, and they increase with temperature growth for freon and decreases for argon. It is shown that such nature of dependences testifies to existence of a precursor chemisorptions and is caused by various power of adsorption of carbon on the plates of the silicon which have passed preliminary micromachining in various chemically active environments.