Crystallization method of silicon film and manufacturing method of thin film transistor-liquid crystal display (TFT-LCD) using the same

摘要

Discloses a crystallization method of a silicon film capable of forming a polysilicon film having excellent characteristics. According to this crystallization method, first, an amorphous silicon film is formed on a substrate. A reflective film pattern capable of reflecting the laser beam is formed on the amorphous silicon film. Next, the amorphous silicon film is irradiated with a laser to crystallize the silicon film. This reflective film pattern is formed so as to expose the amorphous silicon film at the portion where the channel of the thin film transistor is to be formed. Before forming the reflective film pattern, the amorphous silicon film may be patterned in an island shape to crystallize the silicon film to a single crystal level.