Fabrication method of thinner diffusion barrier for ultra high density memory device and non-memory device and multi-layer metal connection wiring method using same

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to multi-layered metal interconnections of memory and non-memory devices, and more particularly, to a novel structure device and a method of manufacturing the same. When manufacturing devices, semiconductor / metal, metal / metal, interlayer insulating layer / metal in silicon (Si) and compound semiconductors (GaAs, GaN, InP) and resistive bonding process and multilayer metallization process for interconnection between individual devices As a diffusion barrier that can prevent interdiffusion, by using tungsten boron nitride (WB _x N _y ), a three-element diffusion barrier proposed in the present invention, a conventional two-element diffusion barrier prevents diffusion at a heat treatment temperature of 500 to 700 ° C. The loss of function prevents defects of high density and deterioration of electrical properties, whereas the subsequent heat treatment at high temperatures above 850 ℃ prevents the diffusion of semiconductors and copper metals, and does not cause any deterioration of electrical properties and defects. . Therefore, the present invention uses a tungsten boron nitride as a diffusion barrier in a new multilayer metal interconnection structure in the manufacturing method of a memory device and a non-memory device, thereby providing a multilayer metal interconnection having excellent electrical characteristics than the conventional diffusion barrier. to provide.