Heterojunction dipole device structure using heterogeneous base doping source

摘要

The present invention relates to a heterojunction dipole device structure using a double base doping source.;Heterojunction dipole devices are compound semiconductors of gallium arsenide (GaAs) or indium phosphorus (InP) systems, and are widely used in integrated circuits for ultrafast optical information communication or wireless communication that process data of ultrafast electronic devices.;Problems caused by anomalous diffusion and hydrogen passivation related to p-type impurities in the prior art are localized by doping impurities of the base of a heterojunction dipole device (HPT) and doping impurities of different properties for each region. To solve this problem, HBT's ultra-fast operating characteristics and reliability were improved.