首页> 外国专利> SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH BUILT-IN TEST CIRCUIT FOR APPLYING STRESS TO TIMING GENERATOR IN BURN-IN TEST

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH BUILT-IN TEST CIRCUIT FOR APPLYING STRESS TO TIMING GENERATOR IN BURN-IN TEST

机译:具有内置测试电路的半导体集成电路设备,可在应力测试中将应力应用于时序发生器

摘要

The semiconductor memory device has a device identification code (ID1) to determine whether the packet signal (RQ) address, the timing generator 16 has identified an input device coupled to the stored apparatus identification code (ID1) and a packet signal code ( ID2) receiving signals between the between the correspondence for a response to the heat signal (IDHIT) indicating to start the control sequence for the data access, tested here represent a command for a burn-in test signal (TP) and a packet signal (RQ) circuit ( to 12) to the share, and a logic gate (23) for generating a heat signal (IDHIT) directly installed from the inside of the mode signal (tEST) indicates the test mode, the stored unit identification code (ID1) and the test signal (TP) a timing generator (16) regardless of correspondence begins the control sequence in the burn-in test.
机译:半导体存储装置具有用于确定分组信号(RQ)地址是否存在的装置识别码(ID1),定时发生器16已经识别了与存储装置识别码(ID1)和分组信号码(ID2)耦合的输入装置。接收之间的信号之间的对应关系,以表示对热信号的响应(IDHIT),以指示开始数据访问的控制序列,此处测试的信号表示预烧测试信号(TP)和分组信号(RQ)的命令电路(至12)和逻辑门(23),用于产生直接从模式信号(tEST)内部安装的热信号(IDHIT),以指示测试模式,存储的单元识别码(ID1)和测试信号(TP),定时发生器(16)不管其对应关系如何,都将在老化测试中开始控制序列。

著录项

  • 公开/公告号KR19990078115A

    专利类型

  • 公开/公告日1999-10-25

    原文格式PDF

  • 申请/专利权人 가네꼬 히사시;

    申请/专利号KR19990009671

  • 发明设计人 하라구찌요시노리;

    申请日1999-03-22

  • 分类号G11C29/00;

  • 国家 KR

  • 入库时间 2022-08-22 02:16:38

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