TESTING METHOD OF PROCESSING MARGIN IN PHOTO LITHOGRAPHY PROCESS

摘要

The present invention relates to a process margin evaluation method in a photolithography process using a defect inspection apparatus for inspecting defects on a wafer in a photolithography process. The method according to the present invention provides a method for processing a photo on a wafer patterned with a different recipe for each chip. A first step of performing a lithography process, a second step of setting a recipe reference, a third step of detecting a defective portion of a wafer using the defect inspection system according to the set recipe reference, and And a fourth step of storing position data in the database system and a fifth step of determining a good area based on the position data of a defective portion stored in the database system at the review station. According to the present invention, in evaluating the process margin in the photolithography process, it is possible to evaluate very precisely and accurately over a much larger area on the wafer than the conventional method.