首页> 外国专利> A GROWTH APPARATUS OF MN-ZN FERRITE SINGLE CRYSTAL AND GROWTH METHOD THEREOF

A GROWTH APPARATUS OF MN-ZN FERRITE SINGLE CRYSTAL AND GROWTH METHOD THEREOF

机译:MN-ZN铁氧体单晶的生长装置及其生长方法

摘要

A Mn-Zn ferrite single crystal ingot growing apparatus and a method for growing the same, comprising: a heating element enclosed by at least a refractory, a core pipe installed inside the heating element, and a first movable pipe installed in the core pipe to introduce an ingot. And a second auxiliary crucible and an auxiliary crucible setting device installed at an upper end of the first auxiliary crucible, the first step of performing a first temperature lowering at a predetermined lowering temperature in the first auxiliary crucible; The second step of performing the second temperature lowering to the predetermined lowering temperature in the auxiliary crucible and the third temperature lowering when the ingot growing material is melted in the first auxiliary crucible and falls into the second auxiliary crucible to raise the ingot. There is provided a third step, and a growing method in which the first to third steps are repeated.;Therefore, the gap between the initial melting raw material interface of the auxiliary crucible and the end of the auxiliary crucible can be adjusted to a certain height by the auxiliary crucible setting device, thereby preventing a large heat flow of the furnace temperature due to the melting raw material interface contact, resulting in thermal shock. Since thermal cracking is eliminated and furnace temperature is lowered in 1st, 2nd, and 3rd stages, thermal imbalance is maintained by maintaining the furnace temperature constant from the beginning to the end of single crystal ingot growth, while maintaining the original melting depth of raw materials. There is an effect of canceling the composition change due to the change in temperature and the formation of thermal cracks and composition cracks.
机译:Mn-Zn铁氧体单晶锭生长装置及其生长方法,包括:至少由耐火材料包围的加热元件;安装在该加热元件内部的芯管;以及安装在该芯管中的第一可动管。介绍锭。第二辅助坩埚和辅助坩埚放置装置安装在第一辅助坩埚的上端,第一步骤是在第一辅助坩埚中以预定的降低温度进行第一温度降低。第二步骤是在辅助坩埚中将第二温度降低至预定的降低温度,并且当锭生长材料在第一辅助坩埚中熔化并落入第二辅助坩埚中以升高锭时,进行第三温度降低的第二步骤。提供了第三步骤和重复第一至第三步骤的生长方法。因此,可以将辅助坩埚的初始熔融原料界面与辅助坩埚的端部之间的间隙调节到一定程度。通过辅助坩埚放置装置的高度调节,从而防止了由于熔化的原料界面接触而引起的炉温大的热流,从而引起热冲击。由于在第一,第二和第三阶段消除了热裂纹并降低了炉温,因此通过保持炉温从单晶锭生长的开始到结束始终保持恒定,同时保持原料的原始熔化深度,可以保持热不平衡。 。具有抵消由于温度变化以及热裂纹和成分裂纹的形成而引起的成分变化的效果。

著录项

  • 公开/公告号KR0175544B1

    专利类型

  • 公开/公告日1999-02-18

    原文格式PDF

  • 申请/专利权人 LG ELECTRO-COMPONENTS CO.;

    申请/专利号KR19960063585

  • 发明设计人 고경붕;

    申请日1996-12-10

  • 分类号C30B11/00;

  • 国家 KR

  • 入库时间 2022-08-22 02:16:19

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