PLANAR TYPE HIGH FREQUENCY INDUCTION COUPLED PLASMA PROCESSING APPARATUS WITH EXTERNAL MAGNETIC FIELD

摘要

The present invention is to solve the shortcomings of the plasma processing apparatus that can not generate a high density of uniformly large plasma as the induced electromotive force does not penetrate deep into the processing chamber, the planar antenna 11 wound several times in a spiral The power supply 12 for applying power to the antenna 11, the chamber 13 for low pressure treatment (etching or deposition), the antenna 11 and the processing chamber 13 is isolated from the antenna 11 The induced electromotive force is passed through a quartz window 14, an electrode 15 for etching or deposition, an impedance matching circuit 16 of the antenna 11, and a radio frequency power supply 17 for applying a bias to the electrode 15. A planar type to which the external magnetic field of the present invention is applied, including a radio frequency shielding film 18 for the antenna 11 and two pairs of electromagnets 19 for generating an external magnetic field perpendicular to the plane of the antenna 11. High frequency inductive coupling Provide a treatment device.