SEMICONDUCTOR IC DEVICE HAVING WIRING STRUCTURE EFFECTIVE AGAINST MIGRATION AND MASK MIS-ALIGNMENT AND PROCESS OF FABRICATION THEREOF

摘要

A wiring structure included is formed on the insulating layer and includes an aluminum-based metal strip extending on the insulating layer and a high melting point metal barrier layer covering the aluminum-based metal strip to prevent electro-migration in the aluminum-based metal layer; The two-level barrier layer has fin portions extending along both sides of the aluminum-based metal layer, which prevent the increase in contact resistance due to misalignment in the wiring structure.