METHOD FOR FABRICATING SILICON TIP TYPE FIELD EMISSION DEVICE

摘要

1. TECHNICAL FIELD OF THE INVENTION;Silicon tip type field emission device.;2. Technical challenges that emissions are to solve;Compensating the disadvantages of the silicon material is to extend the heat conduction and life, and to facilitate the alignment of the cathode emitting electrons and the gate controlling it.;3. Summary of the Solution of the Invention;Diamond-like carbon is coated on the silicon tip of the field emission device to improve the life and characteristics of the field emission device. Diamond-like carbon is not formed by chemical vapor deposition (CVD) but by laser ablation to simplify the patterning process such as fine alignment of the gate metal film and the silicon tip.;4. Important uses of the invention;Electronic communication field using field emission devices.