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Transition metal complex compound having half sandwich structure and donor-acceptor groups

机译:具有半夹心结构和施主-受主基团的过渡金属配合物

摘要

A transition metal complex compound having a half sandwich structure and donor-acceptor groups is claimed. A pi -complex compound of a transition metal (I) is of formula (1) and/or (2): -(Spacer)0,1(P+(R1R2)-C(R3R4))+-(Spacer)0,1- (3); -(Spacer)0,1(P(R1R2)...-C(R3))-(Spacer)0,1- (4); -(Spacer)0,1(P+(R1R2)-N(R3R4))+-(Spacer)0,1- (5); -(Spacer)0,1(P(R1R2)...-N(R3))-(Spacer)0,1- (6); -(Spacer)0,1(P(R1R2)...-N-)-(Spacer)0,1- (7); -(Spacer)0,1S+(R1)-C(R3R4)-(Spacer)0,1- (8); -(Spacer)0,1S(R1)...-C(R3)-(Spacer)0,1- (9); -(Spacer)0,1S(=O)-C(R3R4)-(Spacer)0,1- (10); -(Spacer)0,1S(=O)...-C(R3)-(Spacer)0,1- (11); -(Spacer)0,1S(=O)2-C(R3R4)-(Spacer)0,1- (12); pi = a charged or neutral pi -system, optionally of mono or di-condensed saturated 5-6 membered rings and where H atoms in the condensed or non-condensed form are optionally partially or fully substituted by 1-20 C (cyclo)alkyl, 1-20 C halo(cyclo)alkyl, 2-20 C (cyclo)alkenyl, 1-20 C (cyclo)alkoxy, 7-15 C aralkyl, 6-12 C aryl or once or twice through D or A; D = donor atom; A = acceptor atom. D and/or A are bonded to M directly or through a spacer whereby D and A are bonded via a coordinative bond and D has a positive (partial) charge) and A has a negative (partial) charge; M = a Group III-VIII , preferably III-VI element, lanthanide or actinide; X = anion equivalent; n = 0-4. D is bonded via a spacer or directly to pi bonded disubstituted N, P, As, Sb or Bi or mono substituted O, S, Se or Te and A is bonded via a spacer or directly to M (B, Al, Ga or In) or D and A are bonded via a spacer or directly to pi and/or M via formulae (3)-(7), phosphonium salt, phosphorylide, aminophosphonium salt or phosphinimine or the corresponding ammonium salt and nitrogen ylid, arsonium salt or arsenylide, sulfonium salt or sulfur ylid, selenium salt or selenylide, the corresponding aminoarsonium salt or arsinimine, aminosulfonium salt or sulfinimine, aminoselenium salt or selenimine, formula (8)-(12) and the corresponding sulfimine structures. R1-R4 = 1-20 C (cyclo)alkyl, 1-20 C halo(cyclo)alkyl, 2-20 C (cyclo)alkenyl, 1-20 C (cyclo)alkoxy, 7-15 C aralkyl, 6-12 C aryl, 7-15 C aralkoxy, 6-12 C aryloxy, indenyl, halogen, 1-thienyl, disubstituted amine, trisubstituted silyl, optionally bonded via -CH2- or phenyl-acetylenyl; spacer = divalent silyl, germanyl, amino, phosphino, methylene, ethylene, propylene, disilylethylene or disiloxane, optionally substituted with up to four 1-4 C alkyl, phenyl or 4-6 C cycloalkyl and is bonded directly to pi by P, N, As, S and/or Se.
机译:要求保护具有半夹心结构和供体-受体基团的过渡金属配合物。过渡金属(I)的π-复杂化合物具有式(1)和/或(2):-(间隔基)0,1(P +(R 1 R 2)-C( R 3 R 4))+-(间隔基)0,1-(3); -(垫片)0,1(P(R 1 R 2)...- C(R 3))-(垫片)0,1-(4); -(间隔物)0.1,(P +(R 1 R 2)-N(R 3 R 4))+-(间隔物)0,1-(5); -(垫片)0,1(P(R 1 R 2)...- N(R 3))-(垫片)0,1-(6); -(间隔物)0,1(P(R <1> R <2>)...- N-)-(间隔物)0,1-(7); -(间隔物)0,1S +(R 1)-C(R 3 R 4)-(间隔物)0,1-(8); -(间隔物)0,1S(R <1>)...- C(R <3>)-(间隔物)0,1-(9); -(间隔物)0,1S(= O)-C(R 3 R 4)-(间隔物)0,1-(10); -(垫片)0,1S(= O)...- C(R 3)-(垫片)0,1-(11); -(间隔物)0,1S(= O)2 -C(R 3 R 4)-(间隔物)0,1-(12); pi =带电或中性的pi系统,可选地为单或双稠合的5-6元饱和环,并且其中稠合或非稠合形式的H原子可选地部分或完全被1-20个C(环)烷基取代; 1-20C卤代(环)烷基,2-20C(环)烯基,1-20C(环)烷氧基,7-15C芳烷基,6-12C芳基或通过D或A一次或两次; D =供体原子; A =受体原子。 D和/或A直接或通过间隔基与M键合,其中D和A通过配位键键合,D具有正(部分)电荷,而A具有负(部分)电荷; M = III-VIII族,优选III-VI族元素,镧系元素或act系元素; X =阴离子当量; n = 0-4。 D通过间隔基键合或直接与pi键连接的二取代N,P,As,Sb或Bi或单取代的O,S,Se或Te结合,A通过间隔基键合或直接与M(B,Al,Ga或In )或D和A通过间隔基键合或通过式(3)-(7)直接键合到pi和/或M 、,盐,磷化物,氨基and盐或膦亚胺或相应的铵盐和氮盐,氮盐,or盐或a式(8)-(12)的,or盐或硫基,硒盐或硒化物,相应的氨基ar盐或a啶胺,氨基ulf盐或亚磺胺盐,氨基硒盐或硒代胺,式(8)-(12)和相应的亚磺酰亚胺结构。 R 1 -R 4 = 1-20C(环)烷基,1-20C卤代(环)烷基,2-20C(环)烯基,1-20C(环)烷氧基,7-15 C芳烷基,6-12C芳基,7-15C芳烷氧基,6-12C芳氧基,茚基,卤素,1-噻吩基,二取代的胺,三取代的甲硅烷基,任选地通过-CH 2-或苯基-乙炔基键合; spacer =二价甲硅烷基,锗烷基,氨基,膦基,亚甲基,乙烯,丙烯,二甲硅烷基乙烯或二硅氧烷,可选地被多达四个1-4 C烷基,苯基或4-6 C环烷基取代,并通过P,N直接键合至pi ,As,S和/或Se。

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