Anti-reflection film for a CRT has a thick uppermost silicon oxide film above a thinner indium-tin oxide film

摘要

In an anti-reflection silicon oxide and indium-tin oxide (ITO) multilayer film, the uppermost silicon oxide film (25) is thicker than the immediately underlying ITO film (24). An anti-reflection film comprises a multilayer of silicon oxide and indium-tin oxide (ITO) films (21, 22) on a base film (11), the uppermost silicon oxide film (25) being thicker than the immediately underlying ITO film (24). An Independent claim is also included for production of the above anti-reflection film. Preferred Features: The lowermost film (21), adjacent the base film (11), is a SiOx film (x = 0.5-1.9) which is deposited while controlling the degree of oxidation of silicon by measuring the light absorption of the film (21). Prior to forming the lowermost silicon oxide film (21), the base film (11) is subjected to a surface activation treatment by glow discharge using an aluminum electrode. All the films are formed using a dual magnetron sputtering system.