Split gate MOS transistor for high voltage operation requires no additional manufacturing steps when produced using a conventional double poly-manufacturing method

摘要

The MOS transistor has a source region (102), a drain region (104), a substrate region (106), which defines a channel region separating the source and drain regions, first (110) and second (112) gates and a dielectric material separating the gates from each other and from the substrate. The first gate extends over part of the source region and along part of the channel region. The second gate extends over part of the drain region and along the remainder of the channel region. The gates partially overlap each other.