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in standard cmos technology is realized between a low voltage and a logikschaltung output stage with high voltage, the circuit
in standard cmos technology is realized between a low voltage and a logikschaltung output stage with high voltage, the circuit
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机译:在标准cmos技术中,是在低压和具有高压的logikschaltung输出级之间实现的,电路
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PCT No. PCT/CH93/00124 Sec. 371 Date Jan. 14, 1994 Sec. 102(e) Date Jan. 14, 1994 PCT Filed May 18, 1993 PCT Pub. No. WO93/23926 PCT Pub. Date Nov. 25, 1993.The present invention relates to an intermediary circuit between a low voltage logic circuit and a high voltage output stage in standard CMOS technology. The output stage (20) is comprised of two transistors, respectively with N channel and P channel, achieved according to a standard CMOS technology. The intermediary circuit is comprised of a voltage level translator (21) coupled between an input logic circuit SL and said output stage (20). The voltage level translator (21) is achieved according to a standard CMOS technology and is comprised of at lest two similar base blocks forming voltage mirrors interconnected in a cross-configuration. Said circuit is used to control transducers, plasma screens and electromechanical actuators.
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