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Microwave ion source for ion implantation

机译:用于离子注入的微波离子源

摘要

A microwave energized ion source apparatus (12) is supported by a support tube (94) extending into a cavity (57) defined by a housing assembly (22) and includes a dielectric plasma chamber (42), a pair of vaporizers (44), a microwave tuning and transmission assembly (40) and a magnetic field generating assembly (46). The chamber (42) defines an interior region (50) into which source material and ionizable gas are routed. The chamber (42) is overlied by a cap (62) having an arc slit (64) through which generated ions exit the chamber (42). The microwave tuning and transmission assembly (40), which feeds microwave energy to the chamber (42) in the TEM mode, includes a coaxial microwave energy transmission line center conductor (54). One end (66) of the conductor (54) fits into a recessed portion (68) of the chamber (42) and transmits microwave energy to the chamber (42). The center conductor (54) extends through an evacuated portion of a coaxial tube (56) surrounding the conductor (54). A vacuum seal (58) is disposed in or adjacent the coaxial tube (56) and from the boundary between the evacuated coaxial tube (56) and a non-evacuated region. IMAGE
机译:微波激励离子源装置(12)由延伸到由壳体组件(22)限定的腔(57)中的支撑管(94)支撑,并且包括介电等离子体室(42),一对蒸发器(44)微波调谐和传输组件(40)和磁场产生组件(46)。腔室(42)限定了内部区域(50),原料和可电离气体被引导到该内部区域中。腔室(42)被具有电弧缝隙(64)的盖(62)覆盖,所产生的离子通过该缝隙离开腔室(42)。在TEM模式下将微波能量馈送到腔室(42)的微波调谐和传输组件(40)包括同轴的微波能量传输线中心导体(54)。导体(54)的一端(66)装配在腔室(42)的凹入部分(68)中,并将微波能量传输到腔室(42)。中心导体(54)延伸穿过围绕导体(54)的同轴管(56)的真空部分。真空密封件(58)设置在同轴管(56)中或附近,并从真空同轴管(56)和非真空区域之间的边界处开始。 <图像>

著录项

  • 公开/公告号DE69507232T2

    专利类型

  • 公开/公告日1999-08-19

    原文格式PDF

  • 申请/专利权人 EATON CORP.;

    申请/专利号DE19956007232T

  • 申请日1995-09-22

  • 分类号H01J37/32;H01J27/18;

  • 国家 DE

  • 入库时间 2022-08-22 02:11:00

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