Interconnection track connecting, at several levels of metallization, a grid isolee of a transistor has a diode discharge within a circuit integrated, and advantages of such a track

摘要

The interconnection track (pcn) comprises a first element of the track (el1) extending in the metallization level of the highest, having a first end connected to the gate (g) and having a length (l1) greater than a predetermined critical length. This first element of the track comprises a portion of track interrupted (pp1) in a location emp) (at a distance from said first end of a first distance (l2) of less than the critical length and which is compatible with the layout of the metallization level of greater than, and extending between two insulating layers (is1 and is2) on a same metallization level (m1). The two branches (bp1, bp2) of said portion interrupted are mutually connected by a metal contact of the filling (ct1) also extending in the insulating layer of the support (is2) of the metallization level (m2) immediately greater than that (m1) containing the said portion of track interrupted.