Fabrication of transparent substrate vertical cavity surface emitting lasers by semiconductor wafer bonding

摘要

A method for fabricating transparent substrate vertical cavity surface emitting lasers ("VCSEL"s) using wafer bonding is described. The VCSELs have their active layers located much more closely to a heat sink than is possible in known absorbing substrate VCSELs. The improved heat transport from the active layer to the heat sink permits higher current operation with increased light output as a result of the lower thermal impedance of the system. Alternatively, the same light output can be obtained from the wafer bonded VCSEL at lower drive currents. Additional embodiments use wafer bonding to improve current crowding, current and/or optical confinement in a VCSEL and to integrate additional optoelectronic devices with the VCSEL.