Process of growing multiple quantum well structure for adjusting photoluminescence peak wavelengths to target value

摘要

While compound semiconductor materials are being selectively grown on an open stripe area of a compound semiconductor substrate for forming a multiple quantum well structure, one of the depositing time and the gas flow rate is gradually decreased from the bottom of the multiple quantum well structure toward the top thereof; although the top surface area of the multiple quantum well structure is decreased from the bottom toward the top, the component layers of the multiple quantum well structure are regulated to a target thickness, and the half band width of photoluminescence spectrum is improved.