首页> 外国专利> Low-profile heat transfer apparatus for a surface-mounted semiconductor device employing a ball grid array (BGA) device package

Low-profile heat transfer apparatus for a surface-mounted semiconductor device employing a ball grid array (BGA) device package

机译:用于采用球栅阵列(BGA)器件封装的表面安装半导体器件的薄型传热设备

摘要

A low-profile heat transfer apparatus is presented for a surface- mounted semiconductor device employing a ball grid array (BGA) device package having a chip mounted upon a substantially flat upper surface of a substrate. The semiconductor device is mounted upon a component side of a printed circuit board (PCB), and the heat transfer apparatus is used to transfer heat energy from the semiconductor device to an ambient. A thermally conductive cap structure is positioned between the semiconductor device and the ambient. The cap structure includes a bottom surface having a first cavity sized to receive the substrate and possibly any decoupling capacitors. During use, the substrate resides within the first cavity. In a first embodiment, the chip resides within a second cavity in an upper wall of the first cavity during use. The chip and substrate are thermally coupled to the cap structure by a first and second thermal interface layer, respectively. The use of two thermal interface layers achieves a relatively low value of &thgr;.sub.JS, allowing the cap structure to remain relatively small. In a second embodiment, the chip resides within a hole in the cap structure during use such that the upper surface of the chip is exposed to the ambient. The substrate is thermally coupled to the cap structure by a thermal interface layer. The achieved value of &thgr;.sub.JS is acceptably low for some applications, and the height of the cap structure relative to the component side of the PCB is substantially reduced.
机译:提出了一种用于采用球栅阵列(BGA)器件封装的表面安装半导体器件的薄型传热设备,该器件封装具有安装在基板的基本平坦的上表面上的芯片。半导体器件安装在印刷电路板(PCB)的组件侧,并且传热设备用于将热能从半导体器件传递到周围环境。导热盖结构位于半导体器件和环境之间。盖结构包括具有第一腔的底表面,该第一腔的尺寸设计成可容纳基板以及可能的任何去耦电容器。在使用过程中,基底位于第一腔体内。在第一实施例中,芯片在使用过程中位于第一腔的上壁的第二腔内。芯片和衬底分别通过第一和第二热界面层热耦合到盖结构。两个热界面层的使用实现了较低的值,从而使盖结构保持相对较小。在第二实施例中,芯片在使用期间位于盖结构中的孔内,使得芯片的上表面暴露于环境。衬底通过热界面层热耦合到盖结构。在某些应用中,JS JS的实现值低得可以接受,并且盖结构相对于PCB组件侧的高度大大降低。

著录项

  • 公开/公告号US5907474A

    专利类型

  • 公开/公告日1999-05-25

    原文格式PDF

  • 申请/专利权人 ADVANCED MICRO DEVICES INC.;

    申请/专利号US19970845591

  • 发明设计人 THOMAS P. DOLBEAR;

    申请日1997-04-25

  • 分类号H05K7/20;

  • 国家 US

  • 入库时间 2022-08-22 02:08:06

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